1N5399 المضاربه : Plastic silicon rectifier. Max reccurent peak reverse voltage 1000V. Max average forward rectified current 1.5A.

1N5399 مماثلة

1N5348B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 11V, Izt = 125mA
1N5349B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 12V, Izt = 100mA
1N5350B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 13V, Izt = 100mA
1N5351B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
1N5351B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
1N5352B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 15V, Izt = 75mA
1N5354B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 17V, Izt = 70mA
1N5355B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA

1N5399 Datasheet والمضاربه

الصانع : PanJit

التعبءه : D0-15

دبابيس : 2

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 51 KB

التطبيق : Plastic silicon rectifier. Max reccurent peak reverse voltage 1000V. Max average forward rectified current 1.5A.