1N5357B المضاربه : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 20V, Izt = 65mA

1N5357B مماثلة

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- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 11V, Izt = 125mA
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- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 12V, Izt = 100mA
1N5350B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 13V, Izt = 100mA
1N5351B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
1N5351B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
1N5352B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 15V, Izt = 75mA
1N5354B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 17V, Izt = 70mA
1N5355B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA

1N5357B Datasheet والمضاربه

الصانع : PanJit

التعبءه : DO-201AE

دبابيس : 2

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 336 KB

التطبيق : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 20V, Izt = 65mA