MGY25N120D مماثلة

  • MGY20N120D
    • Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
  • MGY25N120
    • Insulated Gate Bipolar Transistor N-Channel
  • MGY25N120
    • Insulated Gate Bipolar Transistor N-Channel
  • MGY25N120D
    • Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGY25N120D Datasheet والمضاربه

الصانع : ON Semiconductor 

التعبءه : TO-3PBL 

دبابيس : 3 

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 188 KB

التطبيق : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel 

MGY25N120D تحميل PDF