NTE6114 المضاربه : Silicon power rectifier diode,1100 Amp. Max repetitive peak reverse voltae 1600V.

NTE6114 مماثلة

NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.

NTE6114 Datasheet والمضاربه

الصانع : NTE Electronic

التعبءه :

دبابيس : 2

درجة الحراره : دقيقة -40 °C | الاقصى 180 °C

حجم : 25 KB

التطبيق : Silicon power rectifier diode,1100 Amp. Max repetitive peak reverse voltae 1600V.