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NTE6102 مماثلة

  • NTE60
    • Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
  • NTE6002
    • Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
  • NTE6003
    • Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
  • NTE6004
    • Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
  • NTE6005
    • Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
  • NTE6007
    • Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
  • NTE6008
    • Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
  • NTE6009
    • Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.

NTE6102 Datasheet والمضاربه

الصانع : NTE Electronic 

التعبءه :  

دبابيس : 2 

درجة الحراره : دقيقة -65 °C | الاقصى 200 °C

حجم : 23 KB

التطبيق : Industrial rectifier, 550A. Cathode to case. Repetitive peak reverse voltae 600V. 

NTE6102 تحميل PDF