NTE5412 المضاربه : Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V.

NTE5412 مماثلة

NTE5198A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 24V. Zener test current Izt = 105mA."
NTE5183A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 8.2V. Zener test current Izt = 305mA."
NTE5945
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 15A.
NTE5227A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 160V. Zener test current Izt = 16mA."
NTE5914
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A.
NTE5045A
- "Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 68V, Zener test current Izt = 1.8mA."
NTE5322W
- "Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 200V."
NTE5001A
- "Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 2.5V, Zener test current Izt = 20mA."

NTE5412 Datasheet والمضاربه

الصانع : NTE Electronic

التعبءه : TO126

دبابيس : 3

درجة الحراره : دقيقة -40 °C | الاقصى 110 °C

حجم : 23 KB

التطبيق : Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V.