NTE3312 المضاربه : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.

NTE3312 مماثلة

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NTE30001
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NTE3008
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NTE3312 Datasheet والمضاربه

الصانع : NTE Electronic

التعبءه :

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 150 °C

حجم : 19 KB

التطبيق : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.