المسار :OKDatasheet > اشباه الموصلات datasheet > NEC Datasheet > NE4210S01-T1B
NE4210S01-T1B المضاربه : GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B مماثلة
- NE4210M01-T1
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210S01-T1
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE4210S01-T1B
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE425S01-T1
- N-channel HJ-FET
- NE429M01
- N-channel HJ-FET
- NE429M01-T1
- N-channel HJ-FET
NE4210S01-T1B Datasheet والمضاربه
الصانع : NEC
التعبءه : 4-pin u-x type mold
دبابيس : 0
درجة الحراره : دقيقة 0 °C | الاقصى 0 °C
حجم : 71 KB
التطبيق : GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B تحميل PDF