MTW33N10E المضاربه : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW33N10E مماثلة

MTW32N20E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW32N25E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW32N25E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW33N10E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW35N15E
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MTW33N10E Datasheet والمضاربه

الصانع : Motorola

التعبءه : TO-247AE

دبابيس : 4

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 249 KB

التطبيق : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole