ML601J25 المضاربه : High power AlGaAs semiconductor laser diode for optical information systems

ML601J25 مماثلة

ML60114R
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ML60115R
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ML60116R
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ML60116R
- High power AlGaAs semiconductor laser diode
ML60124R
- High power AlGaAs semiconductor laser diode
ML60125R
- High power AlGaAs semiconductor laser diode for optical information systems
ML60127R
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ML60128R
- High power AlGaAs semiconductor laser diode for optical information systems

ML601J25 Datasheet والمضاربه

الصانع : Mitsubishi

التعبءه :

دبابيس : 3

درجة الحراره : دقيقة -40 °C | الاقصى 60 °C

حجم : 95 KB

التطبيق : High power AlGaAs semiconductor laser diode for optical information systems