MX29L3211TC-10 المضاربه : Access time 100ns; 32M-bit (4M x 8/2M x 16) CMOS single voltage pagemode flash EEPROM

MX29L3211TC-10 مماثلة

MX29F002NTQC-12
- Access time 120ns; 2M-bit (256K x 8) CMOS flash memory
MX29F400TMC-70
- Access time 70ns; 4M-bit (512K x 8/256K x 16) CMOS flash memory
MX29F200TMC-55
- Access time 55ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory
MX29F080MC-90
- Access time 90ns; 8M-bit (1024K x 8) CMOS equal sector flash memory
MX29LV008BTI-90
- Access time 90ns; 8M-bit (1M x 8) CMOS single voltage 3V only flash memory
MX29F022NBQC-90
- Access time 90ns; 2M-bit (256K x 8) CMOS flash memory
MX29LV400BXEI-70
- Access time 70ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory
MX29F022NTTC-55
- Access time 55ns; 2M-bit (256K x 8) CMOS flash memory

MX29L3211TC-10 Datasheet والمضاربه

الصانع : Macronix

التعبءه : TSOP

دبابيس : 48

درجة الحراره : دقيقة 0 °C | الاقصى 70 °C

حجم : 724 KB

التطبيق : Access time 100ns; 32M-bit (4M x 8/2M x 16) CMOS single voltage pagemode flash EEPROM