P4KE12 مماثلة

  • P4KE75
    • 60.70V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE440
    • 356.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE12A
    • 10.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE180
    • 146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE220
    • 175.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE200
    • 162.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE39
    • 31.60V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE12
    • 9.72V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications

P4KE12 Datasheet والمضاربه

الصانع : MDE Semiconductor 

التعبءه :  

دبابيس : 2 

درجة الحراره : دقيقة -55 °C | الاقصى 175 °C

حجم : 928 KB

التطبيق : 9.72V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications 

P4KE12 تحميل PDF