30KW216 مماثلة

  • 30KW102
    • 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW108
    • 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW108A
    • 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW120
    • 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW132
    • 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW132A
    • 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW144
    • 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
  • 30KW144A
    • 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications

30KW216 Datasheet والمضاربه

الصانع : MDE Semiconductor 

التعبءه : P-600 

دبابيس : 2 

درجة الحراره : دقيقة -55 °C | الاقصى 175 °C

حجم : 182 KB

التطبيق : 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 

30KW216 تحميل PDF