3EZ8.2D10 المضاربه : 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-10% tolerance.

3EZ8.2D10 مماثلة

3EZ8.2D1
- 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-1% tolerance.
3EZ8.2D10
- 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-10% tolerance.
3EZ8.2D2
- 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-2% tolerance.
3EZ8.2D3
- 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-3% tolerance.
3EZ8.2D4
- 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-4% tolerance.
3EZ8.2D5
- 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-5% tolerance.
3EZ82D
- 3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-20% tolerance.
3EZ82D1
- 3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-1% tolerance.

3EZ8.2D10 Datasheet والمضاربه

الصانع : JGD

التعبءه :

دبابيس : 2

درجة الحراره : دقيقة -65 °C | الاقصى 175 °C

حجم : 160 KB

التطبيق : 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-10% tolerance.