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3EZ6.8D4 مماثلة

  • 3EZ6.2D
    • 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-20% tolerance.
  • 3EZ6.2D1
    • 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-1% tolerance.
  • 3EZ6.2D10
    • 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-10% tolerance.
  • 3EZ6.2D2
    • 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-2% tolerance.
  • 3EZ6.2D3
    • 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-3% tolerance.
  • 3EZ6.2D4
    • "3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-4% tolerance."
  • 3EZ6.2D5
    • 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-5% tolerance.
  • 3EZ6.8D
    • 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-20% tolerance.

3EZ6.8D4 Datasheet والمضاربه

الصانع : JGD 

التعبءه :  

دبابيس : 2 

درجة الحراره : دقيقة -65 °C | الاقصى 175 °C

حجم : 160 KB

التطبيق : 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-4% tolerance. 

3EZ6.8D4 تحميل PDF