3EZ4.7D المضاربه : 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-20% tolerance.

3EZ4.7D مماثلة

3EZ4.3D1
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-1% tolerance.
3EZ4.3D10
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-10% tolerance.
3EZ4.3D2
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-2% tolerance.
3EZ4.3D3
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-3% tolerance.
3EZ4.3D4
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-4% tolerance.
3EZ4.3D5
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-5% tolerance.
3EZ4.7D
- 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-20% tolerance.
3EZ4.7D1
- 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-1% tolerance.

3EZ4.7D Datasheet والمضاربه

الصانع : JGD

التعبءه :

دبابيس : 2

درجة الحراره : دقيقة -65 °C | الاقصى 175 °C

حجم : 160 KB

التطبيق : 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-20% tolerance.