3EZ39D10 المضاربه : 3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-10% tolerance.

3EZ39D10 مماثلة

3EZ3.9D
- 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-20% tolerance.
3EZ3.9D1
- 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-1% tolerance.
3EZ3.9D2
- 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-2% tolerance.
3EZ3.9D3
- 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-3% tolerance.
3EZ3.9D4
- 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-4% tolerance.
3EZ3.9D5
- 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-5% tolerance.
3EZ3.9D5
- 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-5% tolerance.
3EZ30D
- 3 W, silicon zener diode. Nominal voltage 30 V, current 25 mA, +-20% tolerance.

3EZ39D10 Datasheet والمضاربه

الصانع : JGD

التعبءه :

دبابيس : 2

درجة الحراره : دقيقة -65 °C | الاقصى 175 °C

حجم : 160 KB

التطبيق : 3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-10% tolerance.