3EZ17D10 المضاربه : 3 W, silicon zener diode. Nominal voltage 17 V, current 44 mA, +-10% tolerance.

3EZ17D10 مماثلة

3EZ100D
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-20% tolerance.
3EZ100D1
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-1% tolerance.
3EZ100D10
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-10% tolerance.
3EZ100D2
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-2% tolerance.
3EZ100D3
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-3% tolerance.
3EZ100D4
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-4% tolerance.
3EZ100D5
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-5% tolerance.
3EZ10D1
- 3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-1% tolerance.

3EZ17D10 Datasheet والمضاربه

الصانع : JGD

التعبءه :

دبابيس : 2

درجة الحراره : دقيقة -65 °C | الاقصى 175 °C

حجم : 160 KB

التطبيق : 3 W, silicon zener diode. Nominal voltage 17 V, current 44 mA, +-10% tolerance.