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3EZ11D4 مماثلة

  • 3EZ100D
    • 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-20% tolerance.
  • 3EZ100D1
    • 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-1% tolerance.
  • 3EZ100D10
    • 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-10% tolerance.
  • 3EZ100D2
    • 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-2% tolerance.
  • 3EZ100D3
    • 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-3% tolerance.
  • 3EZ100D4
    • 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-4% tolerance.
  • 3EZ100D5
    • 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-5% tolerance.
  • 3EZ10D1
    • 3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-1% tolerance.

3EZ11D4 Datasheet والمضاربه

الصانع : JGD 

التعبءه :  

دبابيس : 2 

درجة الحراره : دقيقة -65 °C | الاقصى 175 °C

حجم : 160 KB

التطبيق : 3 W, silicon zener diode. Nominal voltage 11 V, current 68 mA, +-4% tolerance. 

3EZ11D4 تحميل PDF