1N747D المضاربه : 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-1% tolerance.

1N747D مماثلة

1N746
- 500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-10% standard tolerance.
1N746C
- 500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-2% tolerance.
1N746D
- 500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-1% tolerance.
1N747
- 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-10% standard tolerance.
1N747A
- 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-5% tolerance.
1N747C
- 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-2% tolerance.
1N747D
- 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-1% tolerance.
1N748
- 500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. +-10% standard tolerance.

1N747D Datasheet والمضاربه

الصانع : JGD

التعبءه : DO-35

دبابيس : 2

درجة الحراره : دقيقة -55 °C | الاقصى 175 °C

حجم : 218 KB

التطبيق : 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-1% tolerance.