IRG4PH30KD مماثلة

  • IRG4BC10K
    • Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
  • IRG4BC10KD
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
  • IRG4BC10S
    • Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10SD
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10SD-L
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10SD-L
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10SD-S
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10UD
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.

IRG4PH30KD Datasheet والمضاربه

الصانع : IR 

التعبءه : TO-247AC 

دبابيس : 3 

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 233 KB

التطبيق : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A 

IRG4PH30KD تحميل PDF