المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRFU9N20D
IRFU9N20D المضاربه : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.38 Ohm, ID = 9.4A
IRFU9N20D مماثلة
- IRFU024N
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- IRFU120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
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- IRFU13N15D
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- IRFU13N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A
- IRFU13N20D
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- IRFU214
- HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A
IRFU9N20D Datasheet والمضاربه
الصانع : IR
التعبءه : I-PAK
دبابيس : 3
درجة الحراره : دقيقة -55 °C | الاقصى 175 °C
حجم : 138 KB
التطبيق : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.38 Ohm, ID = 9.4A
IRFU9N20D تحميل PDF