المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRFR9110
IRFR9110 المضاربه : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -3.1A
IRFR9110 مماثلة
- IRFR024N
- Power MOSFET, 55V, 17A
- IRFR120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFR120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFR13N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.18 Ohm, ID = 14A
- IRFR13N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A
- IRFR210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A
- IRFR210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A
- IRFR214
- HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A
IRFR9110 Datasheet والمضاربه
الصانع : IR
التعبءه : TO-252AA
دبابيس : 3
درجة الحراره : دقيقة -55 °C | الاقصى 150 °C
حجم : 189 KB
التطبيق : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -3.1A
IRFR9110 تحميل PDF