المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRFP31N50L
IRFP31N50L المضاربه : HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.15 Ohm, ID = 31 A
IRFP31N50L مماثلة
- IRFP044
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.028 Ohm, ID = 57A
- IRFP048
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.018 Ohm, ID = 70A
- IRFP048N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.016 Ohm, ID = 64A
- IRFP054
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.014 Ohm, ID = 70A
- IRFP054V
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 9.0mOhm, ID = 93A
- IRFP054V
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 9.0mOhm, ID = 93A
- IRFP064
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
- IRFP064N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 110A
IRFP31N50L Datasheet والمضاربه
الصانع : IR
التعبءه : TO-247AC
دبابيس : 3
درجة الحراره : دقيقة -55 °C | الاقصى 150 °C
حجم : 104 KB
التطبيق : HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.15 Ohm, ID = 31 A
IRFP31N50L تحميل PDF