المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRFL9110
IRFL9110 المضاربه : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -1.1A
IRFL9110 مماثلة
- IRFL014
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 2.7A
- IRFL014
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 2.7A
- IRFL014N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.16 Ohm, ID = 1.9A
- IRFL024N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.075 Ohm, ID = 2.8A
- IRFL1006
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.22 Ohm, ID = 1.6A
- IRFL110
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.5A
- IRFL210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 0.96A
- IRFL214
- HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 0.79A
IRFL9110 Datasheet والمضاربه
الصانع : IR
التعبءه : SOT-223
دبابيس : 3
درجة الحراره : دقيقة -55 °C | الاقصى 150 °C
حجم : 188 KB
التطبيق : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -1.1A
IRFL9110 تحميل PDF