IRFIBC30G مماثلة

  • IRFI064
    • HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A
  • IRFI064
    • HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A
  • IRFI1010N
    • HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A
  • IRFI1310G
    • HEXFET power MOSFET
  • IRFI260
    • HEXFET transistor
  • IRFI3205
    • "HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 64 A"
  • IRFI360
    • HEXFET transistor (N-channel). BVDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25 A
  • IRFI460
    • HEXFET transistor (N-channel). BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21 A

IRFIBC30G Datasheet والمضاربه

الصانع : IR 

التعبءه : TO-220 FULLPAK 

دبابيس : 3 

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 185 KB

التطبيق : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 2.5 A 

IRFIBC30G تحميل PDF