IRFI630G المضاربه : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.40 Ohm, ID = 5.9 A

IRFI630G مماثلة

IRFI064
- HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A
IRFI064
- HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A
IRFI1010N
- HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A
IRFI1310G
- HEXFET power MOSFET
IRFI260
- HEXFET transistor
IRFI3205
- "HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 64 A"
IRFI360
- HEXFET transistor (N-channel). BVDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25 A
IRFI460
- HEXFET transistor (N-channel). BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21 A

IRFI630G Datasheet والمضاربه

الصانع : IR

التعبءه : TO-220 FULLPAK

دبابيس : 3

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 193 KB

التطبيق : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.40 Ohm, ID = 5.9 A