المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRFD9110
IRFD9110 المضاربه : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -0.70 A
IRFD9110 مماثلة
- IRFD014
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 1.7A
- IRFD024
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.10 Ohm, ID = 2.5A
- IRFD110
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.0 A
- IRFD120
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.27 Ohm, ID = 1.3 A
- IRFD210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 0.60 A
- IRFD214
- HEXFET power MOSFET
- IRFD220
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.80 Ohm, ID = 0.80 A
- IRFD224
- HEXFET power MOSFET
IRFD9110 Datasheet والمضاربه
الصانع : IR
التعبءه : HD-1
دبابيس : 4
درجة الحراره : دقيقة -55 °C | الاقصى 175 °C
حجم : 190 KB
التطبيق : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -0.70 A
IRFD9110 تحميل PDF