IRF9Z24NS المضاربه : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A

IRF9Z24NS مماثلة

IRF9130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
IRF9140
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IRF9140
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IRF9140
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IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A

IRF9Z24NS Datasheet والمضاربه

الصانع : IR

التعبءه : DDPak

دبابيس : 3

درجة الحراره : دقيقة -55 °C | الاقصى 175 °C

حجم : 184 KB

التطبيق : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A