IRF9Z14S المضاربه : HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -6.7A

IRF9Z14S مماثلة

IRF9130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A

IRF9Z14S Datasheet والمضاربه

الصانع : IR

التعبءه : DDPak

دبابيس : 3

درجة الحراره : دقيقة -55 °C | الاقصى 175 °C

حجم : 397 KB

التطبيق : HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -6.7A