المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRF840AL
IRF840AL المضاربه : "HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A"
IRF840AL مماثلة
- IRF820
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF820AL
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF820AS
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF820S
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF830A
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
- IRF830AS
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
- IRF830S
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.5 Ohm , ID = 4.5A
- IRF840
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A
IRF840AL Datasheet والمضاربه
الصانع : IR
التعبءه : TO-262
دبابيس : 3
درجة الحراره : دقيقة -55 °C | الاقصى 150 °C
حجم : 141 KB
التطبيق : "HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A"
IRF840AL تحميل PDF