IRF7807D2 مماثلة

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7807D2 Datasheet والمضاربه

الصانع : IR

التعبءه : SO

دبابيس : 8

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 147 KB

التطبيق : FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =25mOhm