المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRF7750
IRF7750 المضاربه : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.030 Ohm.
IRF7750 مماثلة
- IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF720
- N-channel HEXFET, 400V, 3.3A
- IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
- IRF721
- N-channel HEXFET, 350V, 3.3A
- IRF722
- N-channel HEXFET, 400V, 2.8A
IRF7750 Datasheet والمضاربه
الصانع : IR
التعبءه : TSSOP
دبابيس : 8
درجة الحراره : دقيقة -55 °C | الاقصى 150 °C
حجم : 120 KB
التطبيق : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.030 Ohm.
IRF7750 تحميل PDF