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IRF7701 مماثلة

  • IRF7103
    • N-channel power MOSFET for fast switching applications, 50V, 3A
  • IRF7103Q
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF7103Q
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF7103QTR
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF720
    • N-channel HEXFET, 400V, 3.3A
  • IRF7204
    • P-channel MOSFET for fast switching applications, 20V, 5.3A
  • IRF721
    • N-channel HEXFET, 350V, 3.3A
  • IRF722
    • N-channel HEXFET, 400V, 2.8A

IRF7701 Datasheet والمضاربه

الصانع : IR 

التعبءه : TSSOP 

دبابيس : 8 

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 161 KB

التطبيق : HEXFET power MOSFET. VDSS = -12V, RDS(on) = 0.011 Ohm, ID = -10A @ VGS = -4.5V. RDS(on) = 0.015 Ohm, ID = -8.5A @ VGS = -2.5V. RDS(on) = 0.022 Ohm, ID = -7.0A @ VGS = -1.8V. 

IRF7701 تحميل PDF