IRF7478 المضاربه : HEXFET power MOSFET. VDSS = 60V, RDS(on) = 26mOhm, ID = 4.2A @ VGS = 10V. RDS(on) = 30mOhm, ID = 3.5A @ VGS = 4.5V.

IRF7478 مماثلة

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IRF7478 Datasheet والمضاربه

الصانع : IR

التعبءه : SO

دبابيس : 8

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 229 KB

التطبيق : HEXFET power MOSFET. VDSS = 60V, RDS(on) = 26mOhm, ID = 4.2A @ VGS = 10V. RDS(on) = 30mOhm, ID = 3.5A @ VGS = 4.5V.