IRF7473 المضاربه : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 26mOhm @ VGS = 10V, ID = 6.9A

IRF7473 مماثلة

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IRF7473 Datasheet والمضاربه

الصانع : IR

التعبءه : SO

دبابيس : 8

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 215 KB

التطبيق : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 26mOhm @ VGS = 10V, ID = 6.9A