IRF7467 مماثلة

  • IRF7103
    • N-channel power MOSFET for fast switching applications, 50V, 3A
  • IRF7103Q
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF7103Q
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF7103QTR
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF720
    • N-channel HEXFET, 400V, 3.3A
  • IRF7204
    • P-channel MOSFET for fast switching applications, 20V, 5.3A
  • IRF721
    • N-channel HEXFET, 350V, 3.3A
  • IRF722
    • N-channel HEXFET, 400V, 2.8A

IRF7467 Datasheet والمضاربه

الصانع : IR 

التعبءه : SO 

دبابيس : 8 

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 125 KB

التطبيق : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12mOhm, ID = 11A 

IRF7467 تحميل PDF