IRF7460 المضاربه : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 10 mOhm @ VGS = 10V, ID = 12A

IRF7460 مماثلة

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7460 Datasheet والمضاربه

الصانع : IR

التعبءه : SO

دبابيس : 8

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 133 KB

التطبيق : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 10 mOhm @ VGS = 10V, ID = 12A