IRF7459 المضاربه : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 9.0 mOhm,, ID = 12A

IRF7459 مماثلة

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IRF7103Q
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IRF7103Q
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IRF7103QTR
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- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7459 Datasheet والمضاربه

الصانع : IR

التعبءه : SO

دبابيس : 8

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 123 KB

التطبيق : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 9.0 mOhm,, ID = 12A