IRF7413 المضاربه : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 11 mOhm @ VGS = 10V, ID = 12A.

IRF7413 مماثلة

IRF7103
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IRF7103Q
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IRF7103Q
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IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7413 Datasheet والمضاربه

الصانع : IR

التعبءه : SO

دبابيس : 8

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 135 KB

التطبيق : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 11 mOhm @ VGS = 10V, ID = 12A.