المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRF5801
IRF5801 المضاربه : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 2.2 Ohm, ID = 0.6A
IRF5801 مماثلة
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5801 Datasheet والمضاربه
الصانع : IR
التعبءه : TSOP
دبابيس : 6
درجة الحراره : دقيقة -55 °C | الاقصى 150 °C
حجم : 131 KB
التطبيق : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 2.2 Ohm, ID = 0.6A
IRF5801 تحميل PDF