المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRF5305L
IRF5305L المضاربه : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A
IRF5305L مماثلة
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5305L Datasheet والمضاربه
الصانع : IR
التعبءه : TO-262
دبابيس : 3
درجة الحراره : دقيقة -55 °C | الاقصى 175 °C
حجم : 188 KB
التطبيق : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A
IRF5305L تحميل PDF