IRF4905L مماثلة

  • IRF430
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A
  • IRF440
    • HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A
  • IRF440
    • HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A
  • IRF440
    • HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A
  • IRF450
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12A
  • IRF460
    • HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A
  • IRF460
    • HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A
  • IRF460
    • HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A

IRF4905L Datasheet والمضاربه

الصانع : IR 

التعبءه : TO-262 

دبابيس : 3 

درجة الحراره : دقيقة -55 °C | الاقصى 175 °C

حجم : 179 KB

التطبيق : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.02 Ohm, ID = -74A 

IRF4905L تحميل PDF