المسار :OKDatasheet > اشباه الموصلات datasheet > IR Datasheet > IRC730
IRC730 المضاربه : HEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm
IRC730 مماثلة
- IRC730
- HEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm
- IRC740
- HEXFET power MOSFET. Continuous drain current 10A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 0.55 Ohm
IRC730 Datasheet والمضاربه
الصانع : IR
التعبءه : TO-220
دبابيس : 5
درجة الحراره : دقيقة -55 °C | الاقصى 150 °C
حجم : 245 KB
التطبيق : HEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm
IRC730 تحميل PDF