HM62V256LTM-10SL المضاربه : 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns

HM62V256LTM-10SL مماثلة

HM621400HCJP-10
- 4M High speed SRAM (4-Mword x 1-bit)
HM621400HCLJP-10
- 4M High speed SRAM (4-Mword x 1-bit)
HM621400HJP-10
- 4M high speed SRAM (4-Mword x 1-bit), 10ns access time
HM621400HJP-12
- 4M high speed SRAM (4-Mword x 1-bit), 12ns access time
HM621400HJP-15
- 4M high speed SRAM (4-Mword x 1-bit), 15ns access time
HM621400HLJP-10
- 4M high speed SRAM (4-Mword x 1-bit), 10ns access time
HM621400HLJP-12
- 4M high speed SRAM (4-Mword x 1-bit), 12ns access time
HM6216255HCJP-10
- 4M High speed SRAM (256-kword x 16-bit)

HM62V256LTM-10SL Datasheet والمضاربه

الصانع : Hitachi

التعبءه : TSOP

دبابيس : 28

درجة الحراره : دقيقة 0 °C | الاقصى 70 °C

حجم : 122 KB

التطبيق : 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns