H2N5401 المضاربه : 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage

H2N5401 مماثلة

H2N5087
- 50mA PNP epitaxial planar transistor for low noise, high gain, general purpose amplifier applications
H2N5088
- 50mA NPN epitaxial planar transistor for low noise, high gain, general purpose amplifier applications
H2N5366
- 500mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltages
H2N5401
- 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage
H2N5551
- 600mA NPN epitaxial planar transistor

H2N5401 Datasheet والمضاربه

الصانع : Hi Sincerity

التعبءه :

دبابيس : 3

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 41 KB

التطبيق : 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage