FDR856P المضاربه : P-Channel Logic Level Enhancement Mode Field Effect Transistor [Not recommended for new designs]

FDR856P مماثلة

FDR8305N
- Dual N-Channel 2.5V Specified PowerTrench® MOSFET
FDR8305N
- Dual N-Channel 2.5V Specified PowerTrench® MOSFET
FDR8308P
- Dual P-Channel Logic Level PowerTrench® MOSFET
FDR8321L
- P-Channel MOSFET With Gate Driver for Load Switch Application
FDR836P
- P-Channel Logic-Level Enhancement Mode Field Effect Transistor [Not recommended for new designs]
FDR840P
- P-Channel 2.5V Specified PowerTrench® MOSFET
FDR842P
- P-Channel 1.8V Specified PowerTrench MOSFET
FDR844P
- P-Channel 1.8V Specified PowerTrench MOSFET

FDR856P Datasheet والمضاربه

الصانع : Fairchild

التعبءه :

دبابيس : 0

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 245 KB

التطبيق : P-Channel Logic Level Enhancement Mode Field Effect Transistor [Not recommended for new designs]