TZX36B المضاربه : 35.3-36.8V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current

TZX36B مماثلة

TZX30
- 28.2-31.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX30A
- 28.2-29.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX30B
- 29.2-30.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX30C
- 30.2-31.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX33
- 31.2-34.5V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX33A
- 31.2-32.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX33B
- 32.2-33.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX33C
- 33.2-34.5V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current

TZX36B Datasheet والمضاربه

الصانع : Diodes

التعبءه : DO-35

دبابيس : 2

درجة الحراره : دقيقة -65 °C | الاقصى 175 °C

حجم : 73 KB

التطبيق : 35.3-36.8V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current