TZX12B المضاربه : 11.6-12.1V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current

TZX12B مماثلة

TZX10
- 9.5-10.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX10A
- 9.5-9.9V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX10C
- 9.9-10.3V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX10D
- 11.1-11.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX12
- 11.4-12.7V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX12A
- 11.4-11.9V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX12B
- 11.6-12.1V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX12C
- 11.9-12.4V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current

TZX12B Datasheet والمضاربه

الصانع : Diodes

التعبءه : DO-35

دبابيس : 2

درجة الحراره : دقيقة -65 °C | الاقصى 175 °C

حجم : 73 KB

التطبيق : 11.6-12.1V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current