BC807 المضاربه : 200V; N-channel enchancement mode DMOS transistor. For switching and AF amplifier applications

BC807 مماثلة

BC807
- 200V; N-channel enchancement mode DMOS transistor. For switching and AF amplifier applications
BC807-16
- 45V; PNP surface mount transistor. For switching and AF amplifier applications
BC807-25
- 45V; PNP surface mount transistor. For switching and AF amplifier applications
BC807-40
- 45V; PNP surface mount transistor. For switching and AF amplifier applications
BC807-45
- 45V; PNP surface mount transistor. For switching and AF amplifier applications

BC807 Datasheet والمضاربه

الصانع : Diodes

التعبءه : SOT-23

دبابيس : 3

درجة الحراره : دقيقة -55 °C | الاقصى 150 °C

حجم : 69 KB

التطبيق : 200V; N-channel enchancement mode DMOS transistor. For switching and AF amplifier applications